Isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220F package ? Low input capacitance and gate charge ? Low gate input resistance ? Reduced switching and conduction losses ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching application

文件：260.89 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

OptiMOS3 Power-Transistor

Features ? N-channel, normal level ? Ecellect gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target applications ? Halogen-free according to IEC61249-2-21

文件：555.77 Kbytes 頁數(shù)：9 Pages

INFINEON

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Material Content Data Sheet

文件：33.11 Kbytes 頁數(shù)：1 Pages

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OptiMOS(TM)3 Power-Transistor

文件：285.7 Kbytes 頁數(shù)：9 Pages

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Material Content Data Sheet

文件：33.11 Kbytes 頁數(shù)：1 Pages

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THRU-HOLE INDUCTORS IPA Series & IPR Series

文件：75.13 Kbytes 頁數(shù)：1 Pages

RFE

RFE international

N 溝道功率 MOSFET

OptiMOS? 系列是高效率解決方案的市場領(lǐng)導(dǎo)者，適用于發(fā)電（例如太陽能微逆變器）、電源（例如服務(wù)器和通信）以及功耗（例如電動車）領(lǐng)域。 ? 優(yōu)化直流-直流轉(zhuǎn)換器技術(shù)\n? 出色的柵極電荷 x R DS(ON) 產(chǎn)品 (FOM)\n? 出色的耐熱性\n? 雙面冷卻\n? 寄生電感低\n? 纖薄外形 (<0.7mm)\n? N通道，正常電平\n? 100% 經(jīng)過雪崩測試\n? 無鉛鍍層;符合 RoHS\n\n\n優(yōu)勢:;

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N 溝道功率 MOSFET

The 150V OptiMOS? achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS? part. ? Excellent switching performance\n? World’s lowest R DS(on)\n? Very low Q g and Q gd\n? Excellent gate charge x R DS(on) product (FOM)\n? RoHS compliant-halogen free\n? MSL1 rated 2\n\n優(yōu)勢:\n? Environmentally friendly\n? Increased efficiency\n? Highest power density\n? Less paralleling required\n? S;

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