Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS? C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

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INFINEON

英飛凌

絲印：6R380C6；Package：PG-TO220；MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features * Extermely low losses due to very low FOM Rdson Qg and Eoss * Very high commutation ruggedness * Easy to use/drive,Pb-free plating, Halogen free * Fully qualified according to JEDEC for Industrial Applications

文件：1.4056 Mbytes 頁數(shù)：19 Pages

INFINEON

英飛凌

isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220F packaging ? High speed switching ? Very high commutation ruggedness ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operationz ? APPLICATIONS ? PFC stages, hard switching PWM stages and resonant s

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ISC

無錫固電

Metal Oxide Semiconductor Field Effect Transistor

文件：1.41181 Mbytes 頁數(shù)：19 Pages

INFINEON

英飛凌

500 V-950 V CoolMOS? N 溝道功率 MOSFET

CoolMOS? C6 結(jié)合了英飛凌作為業(yè)內(nèi)先進的超結(jié)MOSFET供應(yīng)商的相關(guān)經(jīng)驗與其先進的創(chuàng)新技術(shù)C6 器件具備了快速開關(guān)超結(jié) MOSFET 的所有優(yōu)點，同時又不犧牲易用性。很低的開關(guān)和通態(tài)損耗使開關(guān)應(yīng)用更高效，結(jié)構(gòu)緊湊、重量更輕、溫度更低。\n ? 600V CoolMOS? C6 可替代 600V CoolMOS? C3\n? 650V CoolMOS? C6 可替代 650V CoolMOS? C3 ? 易于控制開關(guān)行為\n? 由于非常低的品質(zhì)因數(shù)（R DS(ON)*Q g）和E oss），因此損耗極低\n? 非常高的換流堅固性\n? 使用簡便\n? 與 C3 相比，具有更高的輕載效率\n? 出色的可靠性和經(jīng)過實踐驗證的 CoolMOS? 質(zhì)量以及高密度二極管耐用性\n? 與以前的 CoolMOS? 幾代產(chǎn)品相比，性價比更高\n? 更高效、更緊湊、重量更輕、溫度更低\n\n\n優(yōu)勢:\n?\n ? 提升功率密度\n? 提升可靠性\n? 通用部件可在軟、硬開關(guān)拓撲中使用\n? 提高輕載效率\n? 提高在硬開關(guān)應(yīng)用中的效率\n? 改進了易用性\n? 減輕可能因為 PCB 布局和封裝寄生效應(yīng)而引;

Infineon

英飛凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.41181 Mbytes 頁數(shù)：19 Pages

INFINEON

英飛凌