CoolMOS Power Transistor

Features ? Lowest figure-of-merit RON x Qg ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Worldwide best R DS,on in TO220 Fullpak ? Ultra low gate charge CoolMOS? 900V is designed for:

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INFINEON

英飛凌

Isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220F Package ? Drain Source Voltage- : VDSS=900V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.34Ω (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applicati

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500V-900V CoolMOS? N-Channel Power MOSFET

Replacement for CoolMOS? C3 is CoolMOS? P7\n 900V CoolMOS? C3 is Infineon's third series of CoolMOS? with market entry in 2001. C3 is the \"working horse\" of the portfolio. ? Low specific on-state resistance (RDS(on)*A)\n? Very low energy storage in output capacitance (Eoss) @400V\n? Low gate charge (Qg)\n? Fieldproven CoolMOS? quality\n? CoolMOS? technology has been manufactured by Infineon since 1998\n\n優(yōu)勢:\n? High efficiency and power density\n? Outstanding cost/per;

Infineon

英飛凌

CoolMOS??Power Transistor

Features ? Lowest figure-of-merit RON x Qg ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for industrial applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge

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INFINEON

英飛凌

Isc N-Channel MOSFET Transistor

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ISC

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.34Ω(Max)@VGS= 10V DESCRIPTION · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

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ISC

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