INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Fast Speed IGBT Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry standard TO-247AC package Benefits ? Gener

文件：145 Kbytes 頁(yè)數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits ? Generation 4 IGBTs offer highest efficiency available ? IGBTs optimized for specified application conditions ? Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz

文件：148.01 Kbytes 頁(yè)數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits ? Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) ? Of particular benefit to single-ended converters and boost PFC topologies 150W and higher ? Low conduction losses and minimal minority-carrier recombinat

文件：116.25 Kbytes 頁(yè)數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features ? Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry standard

文件：146.41 Kbytes 頁(yè)數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packa

文件：211.82 Kbytes 頁(yè)數(shù)：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry stan

文件：147.44 Kbytes 頁(yè)數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-pack

文件：213.92 Kbytes 頁(yè)數(shù)：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

Features ? Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications ? Industry-benchmark switching losses improve efficiency of all power supply topologies ? 50 reduction of Eoff parameter ? Low IGBT conduction losses ? Latest-generation IGBT design

文件：157.32 Kbytes 頁(yè)數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits ? Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz ? Of particular benefit in single-ended converters and Power Supplies 150W and higher ?

文件：138.73 Kbytes 頁(yè)數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features ? Optimized for use in Welding and Switch-Mode Power Supply applications ? Industry benchmark switching losses improve efficiency of all power supply topologies ? 50 reduction of Eoff parameter ? Low IGBT conduct

文件：253.08 Kbytes 頁(yè)數(shù)：10 Pages

IRF