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                >G4PC50F>規(guī)格書列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          G4PC50F
          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
          
VCES= 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A

Features
? Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? Industry standard 
          文件：146.41 Kbytes 頁數(shù)：8 Pages
          IRF
          

          G4PC50FD
          INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
          
VCES = 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A
Features
? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? IGBT co-packa
          文件：211.82 Kbytes 頁數(shù)：10 Pages
          IRF
          

          G4PC50U
          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
          
VCES= 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
Features
? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? Industry stan
          文件：147.44 Kbytes 頁數(shù)：8 Pages
          IRF
          

          G4PC50UD
          INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
          
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
Features
? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? IGBT co-pack
          文件：213.92 Kbytes 頁數(shù)：10 Pages
          IRF
          

          G4PC50W
          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
          
Features
? Designed expressly for Switch-Mode Power Supply and PFC 
   (power factor correction) applications
? Industry-benchmark switching losses improve efficiency of all power supply topologies
? 50 reduction of Eoff parameter
? Low IGBT conduction losses
? Latest-generation IGBT design 
          文件：157.32 Kbytes 頁數(shù)：8 Pages
          IRF
          

          
            
          
		
          
            
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          更多G4PC50F供應(yīng)商
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