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          首頁 >G4PC50W>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          G4PC50W

          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

          Features ? Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications ? Industry-benchmark switching losses improve efficiency of all power supply topologies ? 50 reduction of Eoff parameter ? Low IGBT conduction losses ? Latest-generation IGBT design

          文件:157.32 Kbytes 頁數(shù):8 Pages

          IRF

          IRG4PC50W

          絲?。?strong>G4PC50W;Package:TO-247AC;INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

          Features ? Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications ? Industry-benchmark switching losses improve efficiency of all power supply topologies ? 50 reduction of Eoff parameter ? Low IGBT conduction losses ? Latest-generation IGBT design

          文件:157.32 Kbytes 頁數(shù):8 Pages

          IRF

          G4PC50WPBF

          INSULATED GATE BIPOLAR TRANSISTOR

          ? Designed expressly for Switch-Mode Power Supply and PFC\n?? (power factor correction) applications\n? Industry-benchmark switching losses improve efficiency of all power supply topologies\n? 50% reduction of Eoff parameter\n? Low IGBT conduction losses\n? Latest-generation IGBT design and cons;

          Infineon

          英飛凌

          IRG4PC50F

          INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

          VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features ? Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry standard

          文件:146.41 Kbytes 頁數(shù):8 Pages

          IRF

          IRG4PC50F

          Fit Rate / Equivalent Device Hours

          文件:98.39 Kbytes 頁數(shù):35 Pages

          IRF

          IRG4PC50FD

          INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

          VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packa

          文件:211.82 Kbytes 頁數(shù):10 Pages

          IRF

          供應商型號品牌批號封裝庫存備注價格
          25+
          6000
          公司現(xiàn)貨庫存
          詢價
          IR
          24+
          TO-3P
          37
          詢價
          IR
          25+
          TO-3P
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          IR
          25+
          TO-247
          7
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          IR
          23+
          TO-247
          5000
          原裝正品,假一罰十
          詢價
          HAR
          23+
          DIP-16
          6500
          全新原裝假一賠十
          詢價
          IR
          17+
          TO-3P
          60000
          保證進口原裝可開17%增值稅發(fā)票
          詢價
          IR
          23+
          TO-247
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          IR
          22+
          TO-247
          6000
          十年配單,只做原裝
          詢價
          IR仙童/ST
          23+
          TO-220TO-247
          2030000
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          更多G4PC50W供應商 更新時間2026-1-20 17:47:00
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