INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits ? Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) ? Of particular benefit to single-ended converters and boost PFC topologies 150W and higher ? Low conduction losses and minimal minority-carrier recombinat

文件：116.25 Kbytes 頁數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Standard Speed IGBT Features ? Standard: Optimized for minimum saturation voltage and low operating frequencies (

文件：143 Kbytes 頁數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits ? Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (hard switched mode) ? Of particular benefit to single-ended converters and boost PFC topologies 150W and higher ? Low conduction losses and minimal minority-carrier recombinat

文件：116.25 Kbytes 頁數(shù)：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

Fast CoPack IGBT Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof

文件：214.12 Kbytes 頁數(shù)：10 Pages

IRF