INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packa

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INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry stan

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-pack

文件：213.92 Kbytes 頁數(shù)：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

Features ? Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications ? Industry-benchmark switching losses improve efficiency of all power supply topologies ? 50 reduction of Eoff parameter ? Low IGBT conduction losses ? Latest-generation IGBT design

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