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          首頁 >FSYC055D>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FSYC055D

          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is com

          文件:49.3 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSYC055D1

          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is com

          文件:49.3 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSYC055D3

          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is com

          文件:49.3 Kbytes 頁數(shù):8 Pages

          INTERSIL

          FSYC055D

          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          Renesas

          瑞薩

          FSYC055D1

          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          Description\nThe Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combine ? 70A (Note), 60V, rDS(ON) = 0.012?\n? Total Dose\n?? - Meets Pre-RAD Specifications to 100K RAD (Si)\n? Single Event\n?? - Safe Operating Area Curve for Single Event Effects\n?? - SEE Immunity for LET of 36MeV/mg/cm2 with\n???? VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias\n? Dose Ra;

          Renesas

          瑞薩

          詳細(xì)參數(shù)

          • 型號:

            FSYC055D

          • 制造商:

            INTERSIL

          • 制造商全稱:

            Intersil Corporation

          • 功能描述:

            Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          供應(yīng)商型號品牌批號封裝庫存備注價格
          HAR
          05+
          原廠原裝
          4290
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          HAR
          23+
          65480
          詢價
          INTERSIL
          14+
          原廠封裝
          9
          宇航IC只做原裝假一罰十
          詢價
          INTERSIL
          25+
          N/A
          90000
          一級代理商進(jìn)口原裝現(xiàn)貨、價格合理
          詢價
          INTERSIL
          24+
          10
          全新原裝
          詢價
          INTERSIL
          2015+
          99
          原裝正品
          詢價
          更多FSYC055D供應(yīng)商 更新時間2026-1-21 16:07:00
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