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首頁 >FSYC055D3>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
FSYC055D3	文件：49.3 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is com 文件：49.3 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSF055D3	文件：46.64 Kbytes Page：8 Pages	25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件：46.64 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSJ055D3	文件：325.07 Kbytes Page：9 Pages	70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：325.07 Kbytes 頁數(shù)：9 Pages	INTERSIL	INTERSIL

更多FSYC055D3供應商更新時間2026-1-22 16:20:00