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首頁 >FSYE23A0D1>規(guī)格書列表

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FSYE23A0D1	文件：57.92 Kbytes Page：8 Pages	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：57.92 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSL23A0D1	文件：72.36 Kbytes Page：8 Pages	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin 文件：72.36 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0D1	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL

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