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          首頁(yè) >FSYE13A0D3>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          FSYE13A0D3

          Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

          文件:55.68 Kbytes 頁(yè)數(shù):8 Pages

          INTERSIL

          FSL13A0D3

          9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K

          文件:71.78 Kbytes 頁(yè)數(shù):8 Pages

          INTERSIL

          FSS13A0D3

          2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin

          文件:71.31 Kbytes 頁(yè)數(shù):8 Pages

          INTERSIL

          詳細(xì)參數(shù)

          • 型號(hào):

            FSYE13A0D3

          • 制造商:

            INTERSIL

          • 制造商全稱:

            Intersil Corporation

          • 功能描述:

            Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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