<strong id="5lvfi"><dl id="5lvfi"></dl></strong>
      

        

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        

        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          

        1. <del id="5lvfi"></del>
          

          
  
          
  
          
    
  
          
  
          
    
    
    
    
          
  
          

          

          
    
          
    
            
          
                
          首頁
                >FSYE913A0D>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          FSYE913A0D
          Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
          
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin
          文件：73.24 Kbytes 頁數(shù)：9 Pages
          INTERSIL
          

          FSYE913A0D1
          Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
          
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin
          文件：73.24 Kbytes 頁數(shù)：9 Pages
          INTERSIL
          

          FSYE913A0D3
          Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
          
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin
          文件：73.24 Kbytes 頁數(shù)：9 Pages
          INTERSIL
          

          FSYE913A0D
          Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
          Renesas
          瑞薩
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號：
            FSYE913A0D
          • 制造商：
            INTERSIL 
          • 制造商全稱：
            Intersil Corporation 
          • 功能描述：
            Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
            
          
        
          
        
        
          
          
          
            
          相關(guān)規(guī)格書
          
            更多
          
          
          
        
          

        
          
          
          
            
          相關(guān)庫存
          
	        更多
          
          
          
        
          
    
          

          




            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>
              

                

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                

                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  

                1. <del id="5lvfi"></del>
                  

无码国产电影
|
最新操逼网站
|
亚洲人成免费
|
红桃视频亚洲
|
国产一区二区三区四区五区六区久久
|