絲?。?strong>FDB8441；Package：TO-263AB；N-Channel PowerTrench? MOSFET 40V, 120A, 2.5mΩ

Features Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant Applications Powertrain Management Solenoid and Motor Drivers Electronic Steering Integr

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=120A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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N-Channel PowerTrench MOSFET

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N 溝道，PowerTrench? MOSFET，40V，80A，2.5mΩ

N 溝道，PowerTrench? MOSFET，40V，80A，2.5mΩ ?VGS = 10V，ID = 80A時(shí)，rDS(on) = 1.9mΩ（典型值）\n?VGS = 2V時(shí)，典型Qg(10) = 215nC\n?低米勒電荷\n?低Qrr體二極管\n?UIS能力（單脈沖和重復(fù)脈沖）\n?符合AEC Q101\n?符合RoHS標(biāo)準(zhǔn);

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N-Channel PowerTrench? MOSFET 40V, 80A, 2.5m廓

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N-Channel PowerTrench? MOSFET

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N 溝道，PowerTrench? MOSFET，40V，80A，2.5mΩ

N-Channel PowerTrench? MOSFET, 40V, 80A, 2.5mΩ ?典型 rDS(on) = 1.9 m? （VGS = 10 V、ID = 80 A）\n?VGS = 2V時(shí)，典型Qg(10) = 215nC\n?低米勒電荷\n?低 Qrr體二極管\n?UIS 能力（單脈沖和重復(fù)脈沖）\n?符合 AEC Q101 標(biāo)準(zhǔn)\n?符合 RoHS 標(biāo)準(zhǔn);

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