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          BLF522
          UHF power MOS transistor
          
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.
The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
FEATURES
? H
          文件：71.93 Kbytes 頁(yè)數(shù)：12 Pages
          PHI
          PHI
          PHI
          

          BLF522
          UHF POWER MOS TRANSISTOR
          
DESCRIPTION:
The ASI BLF522 is Designed for communications transmitter applications in the UHF frequency range.
FEATURES:
? Designed for broadband operation.
? High power gain
? Omnigold? Metalization System
          文件：21.48 Kbytes 頁(yè)數(shù)：2 Pages
          ASI
          

          BLF522
          UHF power MOS transistor
          DESCRIPTION\nSilicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.\nThe transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.FEATURES\n? High   ? High power gain\n? Easy power control\n? Gold metallization\n? Good thermal stability\n? Withstands full load mismatch\n? Designed for broadband operation.;
          恩XP
          恩XP
          

          BLF522
          UHF POWER MOS TRANSISTOR
          DESCRIPTION:\nThe ASI BLF522 is Designed for communications transmitter applications in the UHF frequency range.FEATURES:\n? Designed for broadband operation.\n? High power gain\n? Omnigold? Metalization System 
          ASI Semiconductor
          ASI Semiconductor
          

          
            
          
		
          
            
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            更新時(shí)間2026-1-18 16:04:00
        
          
        
          
          
          
            
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