HF / VHF power LDMOS transistor

General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Features ■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: ◆ Average output power = 500 W ◆

文件：171.24 Kbytes 頁數(shù)：18 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

HF / VHF power LDMOS transistor

General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Features and benefits ? Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: ? Average output power = 500 W

文件：1.59553 Mbytes 頁數(shù)：19 Pages

AMPLEON

安譜隆

HF / VHF power LDMOS transistor

文件：171.17 Kbytes 頁數(shù)：18 Pages

PHI

PHI

HF / VHF power LDMOS transistor

General description\nA 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

恩XP

HF / VHF power LDMOS transistor

A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (10 MHz to 500 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安譜隆

Power LDMOS transistor

General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without

文件：1.07105 Mbytes 頁數(shù)：14 Pages

AMPLEON

安譜隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

Power LDMOS transistor

General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without

文件：1.07105 Mbytes 頁數(shù)：14 Pages

AMPLEON

安譜隆