Broadband power LDMOS transistor

General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

文件：173.12 Kbytes 頁(yè)數(shù)：13 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

Broadband power LDMOS transistor

General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

文件：1.02295 Mbytes 頁(yè)數(shù)：14 Pages

AMPLEON

安譜隆

Broadband power LDMOS transistor

A 100 W LDMOS RF power pushpull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Integrated ESD protection\nExcellent reliability\nExcellent ruggedness\nHigh power gain\nHigh efficiency\nEasy power control\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安譜隆

Broadband power LDMOS transistor

恩XP

Broadband power LDMOS transistor

文件：173.12 Kbytes 頁(yè)數(shù)：13 Pages

PHI

PHI

Broadband power LDMOS transistor

General description\nA 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. ■ CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:\n?? ? Average output power = 100 W\n?? ? Power gain = 18 dB\n?? ? Drain efficiency = 56 %\n■ 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quies;

恩XP

Package：SOT-540A；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 65V 16DB SOT540A

Ampleon USA Inc.