RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

Broadband power LDMOS transistor

General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Features an

文件：1.3123 Mbytes 頁數(shù)：12 Pages

AMPLEON

安譜隆

Broadband power LDMOS transistor

文件：565.95 Kbytes 頁數(shù)：12 Pages

PHI

PHI

Broadband power LDMOS transistor

General description\nA 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.Features and benef

恩XP

Broadband power LDMOS transistor

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Integrated ESD protection\nExcellent ruggedness\nHigh power gain\nHigh efficiency\nExcellent reliability\nEasy power control\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安譜隆

Broadband power LDMOS transistor

文件：565.95 Kbytes 頁數(shù)：12 Pages

PHI

PHI

Package：SOT-467C；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET LDMOS 32V SOT467C

Ampleon USA Inc.