RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

HF / VHF power LDMOS transistor

General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Features and benefits ? Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ? Average out

文件：1.21831 Mbytes 頁(yè)數(shù)：16 Pages

AMPLEON

安譜隆

HF / VHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF and VHF band)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安譜隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

HF / VHF power LDMOS transistor

General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Features and benefits ? Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ? Average out

文件：1.21831 Mbytes 頁(yè)數(shù)：16 Pages

AMPLEON

安譜隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

HF / VHF power LDMOS transistor

General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Features and benefits ■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ◆ Average o

文件：84.02 Kbytes 頁(yè)數(shù)：14 Pages

恩XP

HF / VHF power LDMOS transistor

文件：362.62 Kbytes 頁(yè)數(shù)：16 Pages

PHI

PHI

HF / VHF power LDMOS transistor

General description\nA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. ■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:\n?? ? Average output power = 300 W\n?? ? Power gain = 26.5 dB\n?? ? Efficiency = 70 %\n■ Easy power control\n■ Integrated ESD protection\n■ Excellent ruggedness\n■ High efficiency\n■ Excellent therma;

恩XP

HF / VHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF and VHF band)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安譜隆