VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange package, with two ceramic caps. The mounting flange provides

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ELEFLOW

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT

文件：85.95 Kbytes 頁數(shù)：13 Pages

PHI

PHI

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES ? High power gain ? Easy power control ? Gold metallization ensures excellent reliability ? Good thermal stability ?

文件：101.83 Kbytes 頁數(shù)：13 Pages

PHI

PHI

VHP push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES ? High power gain ? Easy power contr

文件：129.62 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

VHF POWER MOSFET

DESCRIPTION: The ASI BLF278 is a Dual Common Source N-Channel EnhancementMode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

文件：103.27 Kbytes 頁數(shù)：7 Pages

ASI

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES ? High power gain ? Easy power contr

文件：179.2 Kbytes 頁數(shù)：21 Pages

PHI

PHI

Axial Lead and Cartridge Fuses - Midget

文件：78.82 Kbytes 頁數(shù)：1 Pages

LITTELFUSE

力特

2012 2.4-2.5GHz Combo

文件：531.73 Kbytes 頁數(shù)：5 Pages

PULSE

WIRELESS COMPONENTS

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YAGEO

國巨