| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on mounting b 文件：48.77 Kbytes 頁數(shù)：8 Pages | PHI PHI | PHI | ||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside el 文件：133.78 Kbytes 頁數(shù)：11 Pages | PHI PHI | PHI | ||
UHF power LDMOS transistor DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. FEATURES ? Typical 2-tone performance at a supply voltage of 26V and IDQ of 500 mA - Output power =30W (PEP) - Gain = 12.5 dB - Efficiency = 32 - dlm = -26dBc ? Easy 文件：130.16 Kbytes 頁數(shù)：4 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside elim 文件：101.51 Kbytes 頁數(shù)：12 Pages | PHI PHI | PHI | ||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside eli 文件：93.63 Kbytes 頁數(shù)：12 Pages | PHI PHI | PHI | ||
UHF push-pull power LDMOS transistor DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on un 文件：140.74 Kbytes 頁數(shù)：12 Pages | PHI PHI | PHI | ||
VHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES ? E 文件：69.98 Kbytes 頁數(shù)：12 Pages | PHI PHI | PHI | ||
Power LDMOS transistor General description 200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Features and benefits ? Excellent ruggedness ? High efficiency ? Low thermal resistance providing excellent thermal stability ? Designed for broadband operation (2300 MHz t 文件：828.3 Kbytes 頁數(shù)：11 Pages | AMPLEON 安譜隆 | AMPLEON | ||
HF/VHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES ? 文件：147.01 Kbytes 頁數(shù)：4 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
HF/VHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES ? 文件：81.13 Kbytes 頁數(shù)：11 Pages | PHI PHI | PHI |
技術(shù)參數(shù)
- 插入損耗(最大值)：
3.8dB
- 相位差：
180°@±10°
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
EPCOS |
100 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠 |
詢價(jià) | ||||
恩XP |
13+ |
1483 |
原裝分銷 |
詢價(jià) | |||
恩XP |
10+ |
SOT262 |
2 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢量大發(fā)貨 |
詢價(jià) | ||
256 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||||
恩XP |
25+ |
SOT-123 |
1 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
恩XP |
24+ |
SOT-279A |
112 |
詢價(jià) | |||
PH |
24+ |
原廠封裝 |
1500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
恩XP |
24+ |
N/A |
13523 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) | ||
原廠正品 |
23+ |
高頻管 |
500 |
原裝正品,假一罰十 |
詢價(jià) | ||
25+ |
高頻管 |
78000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) |
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