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          首頁(yè) >BLF2>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          BLF2425M8LS140

          Power LDMOS transistor

          General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M8L140 and BLF2425M8LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, availabl

          文件:975.42 Kbytes 頁(yè)數(shù):11 Pages

          AMPLEON

          安譜隆

          BLF2425M9L30

          Power LDMOS transistor

          General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. F

          文件:1.06945 Mbytes 頁(yè)數(shù):12 Pages

          AMPLEON

          安譜隆

          BLF2425M9LS140

          Power LDMOS transistor

          General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9LS140 is designed for high power CW applications and is assembled in a high performance ceramic package. Features and benefits ? H

          文件:877.69 Kbytes 頁(yè)數(shù):10 Pages

          AMPLEON

          安譜隆

          BLF2425M9LS30

          Power LDMOS transistor

          General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. F

          文件:1.06945 Mbytes 頁(yè)數(shù):12 Pages

          AMPLEON

          安譜隆

          BLF244

          VHF power MOS transistor

          DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES ? High power gain ? Low noise figure ? Easy power control ? Good thermal stability ? Withstands full load mismatc

          文件:91.97 Kbytes 頁(yè)數(shù):12 Pages

          PHI

          PHI

          PHI

          BLF244

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

          恩XP

          恩XP

          BLF245

          RF POWER MOSFET

          DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: ? PG = 13 dB Typical at 175 MHz ? 30:1 Load VSWR Capability ? Omnigold? metalization system

          文件:21.93 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          BLF245

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

          恩XP

          恩XP

          BLF245B

          VHF push-pull power MOS transistor

          DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES ? High power gain ? Easy power control ? Good thermal stability ? Gold metallization ensures excellent reliability.

          文件:94.54 Kbytes 頁(yè)數(shù):12 Pages

          PHI

          PHI

          PHI

          BLF245B

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

          恩XP

          恩XP

          技術(shù)參數(shù)

          • 插入損耗(最大值):

            3.8dB

          • 相位差:

            180°@±10°

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          EPCOS
          100
          原裝現(xiàn)貨,價(jià)格優(yōu)惠
          詢價(jià)
          恩XP
          13+
          1483
          原裝分銷
          詢價(jià)
          恩XP
          10+
          SOT262
          2
          原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大發(fā)貨
          詢價(jià)
          256
          正品原裝--自家現(xiàn)貨-實(shí)單可談
          詢價(jià)
          恩XP
          25+
          SOT-123
          1
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          恩XP
          24+
          SOT-279A
          112
          詢價(jià)
          PH
          24+
          原廠封裝
          1500
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          恩XP
          24+
          N/A
          13523
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
          詢價(jià)
          原廠正品
          23+
          高頻管
          500
          原裝正品,假一罰十
          詢價(jià)
          25+
          高頻管
          78000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          更多BLF2供應(yīng)商 更新時(shí)間2026-1-20 9:04:00
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