RF POWER MOSFET

DESCRIPTION: The ASI BLF245C is a VDMOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: ? PG = 16 dB Typical at 175 MHz ? 30:1 Load VSWR Capability ? Omnigold? metalization system

文件：39.85 Kbytes 頁數(shù)：1 Pages

ASI

VHF POWER MOSFET

DESCRIPTION: The ASI BLF246 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: ? PG = 13 dB Typical at 175 MHz ? 30:1 Load VSWR Capability ? Omnigold? metalization system

文件：21.77 Kbytes 頁數(shù)：1 Pages

ASI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

文件：86.02 Kbytes 頁數(shù)：12 Pages

PHI

PHI

VHP power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGs) information is provided for matched pair applications. Refer to t

文件：137.39 Kbytes 頁數(shù)：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

VHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. FEATURES ? High power gain ? Easy power control ? Good thermal stability ? Gold metallizati

文件：88.85 Kbytes 頁數(shù)：16 Pages

PHI

PHI

VHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the common source connection for the transistor. FEATURES ? High power gain ? Easy power contro

文件：75.44 Kbytes 頁數(shù)：16 Pages

PHI

PHI

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides

文件：105.14 Kbytes 頁數(shù)：13 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

VHF POWER MOSFET

DESCRIPTION: The ASI BLF248is a Balanced N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. FEATURES INCLUDE: ? PG= 11 dB Typical at 225 MHz ? 5:1Load VSWR Capability ? Omnigold? metalization system

文件：22.49 Kbytes 頁數(shù)：1 Pages

ASI