Axial Lead and Cartridge Fuses - Midget

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LITTELFUSE

力特

Axial Lead and Cartridge Fuses

Axial Lead and Cartridge Fuses Laminated Body Fast-Acting Type BLF Series Fibre Body Fast-Acting Type BLN Series

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LITTELFUSE

力特

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on mounting b

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside el

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PHI

PHI

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside el

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PHI

PHI

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside el

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PHI

PHI

Base station LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. FEATURES ? Typical performance at a supply voltage of 27 V: – 1-tone CW; IDQ = 1000 mA – Output power = 125 W – Gain = 16.5 dB – Efficiency = 54 – EDGE outpu

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PHI

PHI

Power LDMOS transistor

General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ? Excellent ruggedness (VSWR ? 40 : 1 through all phase

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AMPLEON

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