UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on mounting b

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

UHF power LDMOS transistor

General description\n10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz.Features and benefits\n■ Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA\n? ? Output power = 10 W (PEP)\n? ? Gain = 18.5 dB\n? ? Efficiency = 40%\n? ? dim = -

恩XP

場(chǎng)效應(yīng)管(MOSFET)

Ampleon

安譜隆

Package：SOT-538A；包裝：托盤(pán) 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 65V 18.5DB SOT538A

Ampleon USA Inc.

Package：SOT-538A；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 65V 18.5DB SOT538A

Ampleon USA Inc.