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首頁(yè) >BLF1>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
BLF178XRS	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BLF178XRS	文件：1.18402 Mbytes Page：14 Pages	Power LDMOS transistor General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits ? Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 ?s with ? of 20 : ? 文件：1.18402 Mbytes 頁(yè)數(shù)：14 Pages	AMPLEON 安譜隆	AMPLEON
BLF1820-70	文件：104.97 Kbytes Page：12 Pages	UHF power LDMOS transistor DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. FEATURES ? Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 65 W (PEP) – Gain = 12 dB – Efficiency = 32 – dim = ?26 dBc ? Ea 文件：104.97 Kbytes 頁(yè)數(shù)：12 Pages	PHI PHI	PHI
BLF1820-90	文件：107.43 Kbytes Page：12 Pages	UHF power LDMOS transistor DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. FEATURES ? Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 90 W (PEP) – Gain = 12 dB – Efficiency = 32 – dim = ?26 dBc ? Easy p 文件：107.43 Kbytes 頁(yè)數(shù)：12 Pages	PHI PHI	PHI
BLF1822-10	文件：156.7 Kbytes Page：16 Pages	UHF power LDMOS transistor DESCRIPTION 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. FEATURES ? Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA: – Output power = 10 W (PEP) – Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz – Efficiency 文件：156.7 Kbytes 頁(yè)數(shù)：16 Pages	PHI PHI	PHI
BLF182XR	文件：1.32235 Mbytes Page：15 Pages	Power LDMOS transistor General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits ? Easy power control ? Integrated double sided ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stabilit 文件：1.32235 Mbytes 頁(yè)數(shù)：15 Pages	AMPLEON 安譜隆	AMPLEON
BLF182XRS	文件：1.32235 Mbytes Page：15 Pages	Power LDMOS transistor General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits ? Easy power control ? Integrated double sided ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stabilit 文件：1.32235 Mbytes 頁(yè)數(shù)：15 Pages	AMPLEON 安譜隆	AMPLEON
BLF183XR	文件：1.14574 Mbytes Page：15 Pages	Power LDMOS transistor General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Designed 文件：1.14574 Mbytes 頁(yè)數(shù)：15 Pages	AMPLEON 安譜隆	AMPLEON
BLF183XRS	文件：1.14574 Mbytes Page：15 Pages	Power LDMOS transistor General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Designed 文件：1.14574 Mbytes 頁(yè)數(shù)：15 Pages	AMPLEON 安譜隆	AMPLEON
BLF184XR	文件：1.32244 Mbytes Page：15 Pages	Power LDMOS transistor General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Designed 文件：1.32244 Mbytes 頁(yè)數(shù)：15 Pages	AMPLEON 安譜隆	AMPLEON

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技術(shù)參數(shù)

GP (dB)：
20.8
Die Technology：
LDMOS
VDS (V)：
50.0
ηD (%)：
46.0
PL(1dB) (W)：
600.0
PL(1dB) (dBm)：
57.8
Test Signal：
2-Tone
Fmin (MHz)：
400
Fmax (MHz)：
1000
Status：
Not for design in
Matching：
I

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市勤思達(dá)科技有限公司	BLF1048	恩XP	1430+	原裝正品	5800	全新原裝,公司大量現(xiàn)貨供應(yīng),絕對(duì)正品	詢價(jià)
深圳市粵科源興科技有限公司	BLF188XRU	HIGHEND	60	AP3	60		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	BLF147	恩XP		PHI	250	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
深圳市卓越微芯電子有限公司	BLF175	恩XP	25+		20	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市一線半導(dǎo)體有限公司	BLF1822-10		24+		800		詢價(jià)
深圳市弘為電子有限公司	BLF1043	PHI	24+	高頻管	600	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市利加科技有限公司	BLF147	PHI	16+	NA	8800	原裝現(xiàn)貨,貨真價(jià)優(yōu)	詢價(jià)
深圳市豪邁興電子有限公司	BLF177C	恩XP	24+	N/A	21322	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
深圳市凌旭科技有限公司	BLF175	恩XP	2016+	TO-59	3900	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	BLF177	恩XP	23+	高頻管	1000	原裝正品,假一罰十	詢價(jià)

更多BLF1供應(yīng)商更新時(shí)間2026-1-20 11:03:00

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