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首頁(yè) >BLF1>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
BLF10H6600PS	文件：1.51826 Mbytes Page：18 Pages	Power LDMOS transistor General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ? Excellent ruggedness (VSWR ? 40 : 1 through all phase 文件：1.51826 Mbytes 頁(yè)數(shù)：18 Pages	AMPLEON 安譜隆	AMPLEON
BLF13H9L750P	文件：1.31526 Mbytes Page：13 Pages	Power LDMOS transistor General description 750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz. Features and benefits ? High efficiency ? Excellent ruggedness ? Excellent thermal stability ? Easy power control ? Integrated dual sided ESD protection enab 文件：1.31526 Mbytes 頁(yè)數(shù)：13 Pages	AMPLEON 安譜隆	AMPLEON
BLF13H9LS750P	文件：1.31526 Mbytes Page：13 Pages	Power LDMOS transistor General description 750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz. Features and benefits ? High efficiency ? Excellent ruggedness ? Excellent thermal stability ? Easy power control ? Integrated dual sided ESD protection enab 文件：1.31526 Mbytes 頁(yè)數(shù)：13 Pages	AMPLEON 安譜隆	AMPLEON
BLF145	文件：81.73 Kbytes Page：1 Pages	N-Channel Enhancement Mode DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: ? PG = 20 dB Typ. at 30 W /28 MHz ? Omnigold? Metalization System ??????? 文件：81.73 Kbytes 頁(yè)數(shù)：1 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
BLF145	文件：88.93 Kbytes Page：12 Pages	HF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage 文件：88.93 Kbytes 頁(yè)數(shù)：12 Pages	PHI PHI	PHI
BLF145	文件：21.07 Kbytes Page：1 Pages	VHF POWER MOSFET DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: ? PG = 20 dB Typ. at 30 W /28 MHz ? Omnigold? Metalization System 文件：21.07 Kbytes 頁(yè)數(shù)：1 Pages	ASI	ASI
BLF145	文件：285.21 Kbytes Page：15 Pages	HF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltag 文件：285.21 Kbytes 頁(yè)數(shù)：15 Pages	恩XP	恩XP
BLF145	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BLF147	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BLF147	文件：281.31 Kbytes Page：15 Pages	VHF power MOS transistor DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t 文件：281.31 Kbytes 頁(yè)數(shù)：15 Pages	恩XP	恩XP

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技術(shù)參數(shù)

GP (dB)：
20.8
Die Technology：
LDMOS
VDS (V)：
50.0
ηD (%)：
46.0
PL(1dB) (W)：
600.0
PL(1dB) (dBm)：
57.8
Test Signal：
2-Tone
Fmin (MHz)：
400
Fmax (MHz)：
1000
Status：
Not for design in
Matching：
I

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市勤思達(dá)科技有限公司	BLF1048	恩XP	1430+	原裝正品	5800	全新原裝,公司大量現(xiàn)貨供應(yīng),絕對(duì)正品	詢價(jià)
深圳市粵科源興科技有限公司	BLF188XRU	HIGHEND	60	AP3	60		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	BLF147	恩XP		PHI	250	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
深圳市卓越微芯電子有限公司	BLF175	恩XP	25+		20	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市一線半導(dǎo)體有限公司	BLF1822-10		24+		800		詢價(jià)
深圳市弘為電子有限公司	BLF1043	PHI	24+	高頻管	600	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市利加科技有限公司	BLF147	PHI	16+	NA	8800	原裝現(xiàn)貨,貨真價(jià)優(yōu)	詢價(jià)
深圳市豪邁興電子有限公司	BLF177C	恩XP	24+	N/A	21322	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
深圳市凌旭科技有限公司	BLF175	恩XP	2016+	TO-59	3900	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	BLF177	恩XP	23+	高頻管	1000	原裝正品,假一罰十	詢價(jià)

更多BLF1供應(yīng)商更新時(shí)間2026-1-20 11:03:00

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