Base station LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. FEATURES ? Typical performance at a supply voltage of 27 V: – 1-tone CW; IDQ = 1000 mA – Output power = 125 W – Gain = 16.5 dB – Efficiency = 54 – EDGE outpu

文件：110.73 Kbytes 頁數(shù)：12 Pages

PHI

PHI

Base station LDMOS transistor

DESCRIPTION\n125 W LDMOS power transistor for base station\napplications at frequencies from 800 MHz to 1000 MHz.FEATURES\n? Typical performance at a supply voltage of 27 V:\n– 1-tone CW; IDQ = 1000 mA\n– Output power = 125 W\n– Gain = 16.5 dB\n– Efficiency = 54%\n– EDGE output power = 45 W (AV) ? Typical performance at a supply voltage of 27 V:\n– 1-tone CW; IDQ = 1000 mA\n– Output power = 125 W\n– Gain = 16.5 dB\n– Efficiency = 54%\n– EDGE output power = 45 W (AV)\n– ACPR400 = ?64 dBc at 400 kHz\n(EDGE; IDQ = 750 mA)\n– EVM = 2% rms (AV)\n(EDGE; IDQ = 750 mA)\n? Easy power control;

恩XP

CK ROTARY SWITCH

FEATURES Standard 30° indexing, 60° and 90° available Moulded 27.5mm diameter Single wafer switch Maximum 12 positions Up to 4 poles per switch Shorting (make before break 30° indexing only) or non-shorting (break before make) Moulded stop or adjustable stops to restrict number of posit

文件：922.87 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

SIL 3 Digital Output Driver, NE Loads Bus Powered, DIN-Rail Model D1049S

Features: SIL 3 according to IEC 61508:2010 Ed. 2 for Tproof = 12 / 20 yrs (≤10 / >10 of total SIF). PFDavg (1 year) 8.32 E-06, SFF 98.90 . SIL 3 Systematic capability. Output to Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. Bus powered for NE loads. Short and open cir

文件：258.089 Kbytes 頁數(shù)：2 Pages

GMI