NPN Silicon RF Transistor

NPN Silicon RF Transistor* ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA ? Power amplifier for DECT and PCN systems ? fT = 7.5 GHz, F = 1.3 dB at 900 MHz ? Pb-free (RoHS comp

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INFINEON

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NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA ? Power amplifier for DECT and PCN systems ? fT = 7.5GHz F = 1.5 dB at 900MHz

文件：60.94 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

NPN Silicon RF Transistor

文件：79.52 Kbytes 頁數(shù)：7 Pages

INFINEON

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Low Noise Silicon Bipolar RF Transistor

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高線性度RF 管基

NPN硅射頻晶體管 ? 適用于天線和電信系統(tǒng)中低噪聲、低失真寬帶放大器，頻率高達 1.5 GHz，集電極電流為 20 mA 至 80 mA\n? fT = 7.5 GHz，F(xiàn) = 1.3 dB @ 900 MHz\n? 無鉛（符合 RoHS 標準）封裝;

Infineon

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Trans RF BJT NPN 12V 0.1A Automotive 4-Pin(3+Tab) SOT-143

NJS

NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA ? Power amplifier for DECT and PCN systems ? fT = 7.5GHz F = 1.5 dB at 900MHz

文件：60.52 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

isc Silicon NPN RF Transistor

DESCRIPTION ? Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz ? High Gain ︱ S21︱ 2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for use in low noise

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ISC

無錫固電

NPN Silicon RF Transistor

NPN Silicon RF Transistor* ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA ? Power amplifier for DECT and PCN systems ? fT = 7.5 GHz, F = 1.3 dB at 900 MHz ? Pb-free (RoHS comp

文件：79.27 Kbytes 頁數(shù)：7 Pages

INFINEON

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Low noise silicon bipolar RF transistor

Product description ? NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchm

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