NPN Silicon RF Transistor

NPN Silicon RF Transistor* ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA ? Power amplifier for DECT and PCN systems ? fT = 7.5 GHz, F = 1.3 dB at 900 MHz ? Pb-free (RoHS comp

文件：79.27 Kbytes 頁數(shù)：7 Pages

INFINEON

英飛凌

isc Silicon NPN RF Transistor

DESCRIPTION ? Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz ? High Gain ︱ S21︱ 2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for use in low noise

文件：281.25 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA ? Power amplifier for DECT and PCN systems ? fT = 7.5GHz F = 1.5 dB at 900MHz

文件：60.52 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

NPN Silicon RF Transistor

文件：83.26 Kbytes 頁數(shù)：7 Pages

INFINEON

英飛凌

Low Noise Silicon Bipolar RF Transistor

文件：552.02 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

Low noise silicon bipolar RF transistor

Product description ? NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchm

文件：644.65 Kbytes 頁數(shù)：19 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor

文件：83.26 Kbytes 頁數(shù)：7 Pages

INFINEON

英飛凌

Low Noise Silicon Bipolar RF Transistor

文件：552.02 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

高線性度RF 管基

NPN硅射頻晶體管 ? 適用于天線和電信系統(tǒng)中低噪聲、低失真寬帶放大器，頻率高達(dá) 1.5 GHz，集電極電流為 20 mA 至 80 mA\n? fT = 7.5 GHz，F(xiàn) = 1.3 dB @ 900 MHz\n? 無鉛（符合 RoHS 標(biāo)準(zhǔn)）封裝;

Infineon

英飛凌

高線性度RF 管基

NPN 硅平面外延晶體管，采用 4 引腳雙發(fā)射極 SOT343 封裝，適用于低噪聲和低失真寬帶放大器。該射頻晶體管受益于英飛凌在射頻元件領(lǐng)域的長期經(jīng)驗(yàn)，結(jié)合了易用性和穩(wěn)定的批量生產(chǎn)，具有基準(zhǔn)質(zhì)量和可靠性。 ? 適用于高壓應(yīng)用，VCE < 12 V\n? 轉(zhuǎn)換頻率 fT = 7.5 GHz\n? 易于使用，無鉛（符合 RoHS 標(biāo)準(zhǔn)）和無鹵素行業(yè)\n? 帶可見引線的標(biāo)準(zhǔn) SOT343 封裝;

Infineon

英飛凌