| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：68.19 Kbytes 頁數：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件：326.54 Kbytes 頁數：2 Pages | ISC 無錫固電 | ISC | ||
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VI? is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally 文件：35.76 Kbytes 頁數：2 Pages | ADPOW | ADPOW | ||
POWER MOS V FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Avalanche Ener 文件：123.99 Kbytes 頁數：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：71.22 Kbytes 頁數：4 Pages | ADPOW | ADPOW | ||
100 Avalanche Tested Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：76 Kbytes 頁數：4 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
100 Avalanche Tested Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：76 Kbytes 頁數：4 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
POWER MOS 7 R FREDFET 文件：375.54 Kbytes 頁數：5 Pages | ADPOW | ADPOW | ||
FREDFETs ROHS | Microchip 微芯科技 | Microchip | ||
FREDFETs ROHS | Microchip 微芯科技 | Microchip |
詳細參數
- 型號：
APT1001
- 制造商：
ADPOW
- 制造商全稱：
Advanced Power Technology
- 功能描述：
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
APT |
24+ |
8866 |
詢價 | ||||
ATP |
05+ |
TO-247 |
1000 |
原裝進口 |
詢價 | ||
APT |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價 | ||
APT |
24+ |
TO-247 |
5000 |
全現原裝公司現貨 |
詢價 | ||
APT |
23+ |
NA |
1200 |
全新原裝假一賠十 |
詢價 | ||
MS |
22+ |
原廠原封 |
8200 |
原裝現貨庫存.價格優(yōu)勢!! |
詢價 | ||
Microse |
23+ |
TO-247 |
8560 |
受權代理!全新原裝現貨特價熱賣! |
詢價 | ||
APT |
25+ |
TO-247 |
2258 |
原裝優(yōu)勢!絕對公司現貨! |
詢價 | ||
APT |
專業(yè)鐵帽 |
TO-3 |
100 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
MICROSEMI |
三年內 |
1983 |
只做原裝正品 |
詢價 |
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