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          首頁 >APT1001>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          APT1001R1HN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

          文件:297.69 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R1HVR

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching

          文件:66.93 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT1001R2AN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

          文件:309.4 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R2BN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=10A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:359.38 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R2HN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=9A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:360.21 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R3AN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 8.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

          文件:309.34 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R3BN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=10A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:359.63 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R3BN

          N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          文件:52.1 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT1001R3HN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=9A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:297.68 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1001R6BFLL

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

          文件:372.49 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          詳細(xì)參數(shù)

          • 型號:

            APT1001

          • 制造商:

            ADPOW

          • 制造商全稱:

            Advanced Power Technology

          • 功能描述:

            Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

          供應(yīng)商型號品牌批號封裝庫存備注價格
          APT
          24+
          8866
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          5000
          原裝正品,假一罰十
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          全現(xiàn)原裝公司現(xiàn)貨
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          APT
          23+
          NA
          1200
          全新原裝假一賠十
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          MS
          22+
          原廠原封
          8200
          原裝現(xiàn)貨庫存.價格優(yōu)勢!!
          詢價
          Microse
          23+
          TO-247
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
          詢價
          APT
          25+
          TO-247
          2258
          原裝優(yōu)勢!絕對公司現(xiàn)貨!
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          APT
          專業(yè)鐵帽
          TO-3
          100
          原裝鐵帽專營,代理渠道量大可訂貨
          詢價
          MICROSEMI
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          更多APT1001供應(yīng)商 更新時間2026-1-18 16:30:00
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