Complementary Enhancement Mode Field Effect Transistor

General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a

文件：137.17 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導體

Complementary Enhancement Mode Field Effect Transistor

文件：215.37 Kbytes 頁數(shù)：9 Pages

AOSMD

萬國半導體

MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美國萬代

MOSFET

MTW

美臺微

場效應管

HXY MOSFET

華軒陽電子

30V Complementary MOSFET

General Description ? Trench Power MOSFET technology ? Low RDS(ON) ? Low Gate Charge ? Excellent Thermal Performance ? RoHS and Halogen-Free Compliant Applications ? Pch+Nch Complementary MOSFET for DC-FAN Product Summary Q1 Q2 VDS

文件：562.16 Kbytes 頁數(shù)：11 Pages

AOSMD

萬國半導體

Complementary Enhancement Mode Field Effect Transistor

General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a

文件：137.17 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導體

Complementary Enhancement Mode Field Effect Transistor

文件：215.37 Kbytes 頁數(shù)：9 Pages

AOSMD

萬國半導體