N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU448 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

文件：72.07 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：352.99 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：994.15 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

AOS

美國萬代

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU448 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

文件：72.07 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體