絲印：7N60；Package：TO-220C；7A 600V N-channel Enhancement Mode Power MOSFET

文件：898.89 Kbytes 頁數(shù)：11 Pages

WXDH

東海半導體

絲?。?strong>7N60；Package：TO-220C；7A 600V N-channel Enhancement Mode Power MOSFET

文件：898.89 Kbytes 頁數(shù)：11 Pages

WXDH

東海半導體

絲?。?strong>7N60；Package：TO-220C；7A 600V N-channel Enhancement Mode Power MOSFET

文件：899.52 Kbytes 頁數(shù)：11 Pages

WXDH

東海半導體

絲印：7N60；Package：TO-220C；7A 600V N-channel Enhancement Mode Power MOSFET

文件：898.85 Kbytes 頁數(shù)：11 Pages

WXDH

東海半導體

600V N-Channel Power MOSFET

Features ● RDS(ON)

文件：2.05237 Mbytes 頁數(shù)：9 Pages

DYELEC

迪一電子

N-Channel Power MOSFET

DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power su

文件：678.82 Kbytes 頁數(shù)：8 Pages

NELLSEMI

尼爾半導體

7A mps,600 Volts N-CHANNEL MOSFET

FEATURE ● 7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：193.27 Kbytes 頁數(shù)：2 Pages

CHONGQING

平偉實業(yè)

7 Amps竊?00Volts N-Channel MOSFET

■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20?@VGS = 10 V ● Low gate cha

文件：470.34 Kbytes 頁數(shù)：5 Pages

ESTEK

伊泰克電子

isc N-Channel Mosfet Transistor

? DESCRITION ? Designed for high efficiency switch mode power supply. ? FEATURES ? Drain Current –ID= 7A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ? Avalanche Energy Specified ? Fast Switching ? Simple Drive Requirem

文件：260.579 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL POWER MOSFET

■ DESCRIPTION 7N60 7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switch

文件：618.55 Kbytes 頁數(shù)：7 Pages

ZSELEC

淄博圣諾