| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:65R026M2;Package:PG-TO263-7;CoolSiC? MOSFET 650 V G2 Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件:1.40367 Mbytes 頁數(shù):17 Pages | INFINEON 英飛凌 | INFINEON | ||
絲印:65R026M2;Package:PG-HDSOP-16;SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件:1.20399 Mbytes 頁數(shù):19 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?strong>65R026M2;Package:PG-HSOF-8;CoolSiC? MOSFET 650 V G2 Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件:1.3649 Mbytes 頁數(shù):18 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?strong>65R026M2;Package:PG-LHSOF-4;SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件:936.7 Kbytes 頁數(shù):16 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?strong>65R026M2;Package:PG-TO247-3;SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件:1.14619 Mbytes 頁數(shù):17 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?strong>65R026M2;Package:PG-TO247-4;SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件:1.027589 Mbytes 頁數(shù):17 Pages | INFINEON 英飛凌 | INFINEON |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
2447 |
PG-TO247-3 |
115000 |
240個(gè)/管一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) | ||
Infineon/英飛凌 |
2021+ |
PG-TO247-3 |
9600 |
原裝現(xiàn)貨,歡迎詢價(jià) |
詢價(jià) | ||
Infineon/英飛凌 |
24+ |
PG-TO247-3 |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價(jià) | ||
Infineon/英飛凌 |
25+ |
PG-TO247-3 |
30000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
PG-TO247-3 |
6820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
Infineon/英飛凌 |
2022+ |
PG-TO247-3 |
48000 |
只做原裝,絕對(duì)原裝,假一罰十 |
詢價(jià) | ||
Infineon/英飛凌 |
25 |
PG-TO247-3 |
6000 |
原裝正品 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
PG-TO247-3 |
12700 |
買原裝認(rèn)準(zhǔn)中賽美 |
詢價(jià) | ||
INFINEON |
23+ |
GOOP |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
GOOP |
7000 |
詢價(jià) |
相關(guān)芯片絲印
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- IPW65R029CFD7
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相關(guān)庫存
更多- IMZA65R027M1H
- IPDQ65R029CFD7
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