| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/3p/marking.html">3P;Package:SOT-23;Small Signal MOSFET Transistor Small Signal MOSFET Transistor FEATURES ● High Density Cell Design For Low RDS(ON)。 ● Voltage Controlled Small Switch. ● Rugged and Reliable. ● High Saturation Current Capability. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application. 文件:226.69 Kbytes 頁數(shù):4 Pages | BILIN 銀河微電 | BILIN | ||
N-CHANNEL TRANSISTOR Description The MTN7002N2 is a N-channel enhancement-mode MOS transistor. Drain-Sourse Voltage BVDSS 60 V Drain-Gate Voltage (RGS=1M:) BVDSS 60 V Gate-Source Voltage VGS +/-40 V Continuous Drain Current (Ta=25℃) ID 200 *1 mA Continuous Drain Current (Ta=100℃) ID 115 *1 mA Pulsed Drain Curre 文件:88 Kbytes 頁數(shù):3 Pages | COMCHIP 典琦 | COMCHIP | ||
TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 文件:228.66 Kbytes 頁數(shù):1 Pages | DCCOM 道全 | DCCOM | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Voltage - 60 Volts Drain Curreent - 115 mAmps FEATURES ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected :1000V MECHANICAL DATA ● Case: SOT-23, Molded Plastic ● Case Material - UL Flammabili 文件:1.37434 Mbytes 頁數(shù):3 Pages | DIOTECH | DIOTECH | ||
MOSFET (N-Channel) MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter 文件:1.5438 Mbytes 頁數(shù):5 Pages | JIANGSU 長電科技 | JIANGSU | ||
N-Channel MOSFET Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability Drain-Source voltage VDS 60 V Drain Current ID 115 mA Power Dissipation PD 225 mW 文件:43.36 Kbytes 頁數(shù):1 Pages | KEXIN 科信電子 | KEXIN | ||
絲印:F2;Package:SOT-23;N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) 文件:1.20175 Mbytes 頁數(shù):5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
NCE N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES ● VDS = 60V,ID = 0.115A RDS(ON) 文件:307.25 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/s72/marking.html">S72;Package:SOT-23;N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description ? N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features ? High density cell design for low RDS(ON). ? Voltage controlled small signal switching. ? Rugged a 文件:91.04 Kbytes 頁數(shù):6 Pages | PANJIT 強茂 | PANJIT | ||
Small Signal MOSFET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 文件:124.95 Kbytes 頁數(shù):5 Pages | SECOS 喜可士 | SECOS |
技術(shù)參數(shù)
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
60
- VGS Max (V):
±20
- VGS(th) Max (V):
2.5
- ID Max (A):
0.115
- PD Max (W):
0.2
- RDS(on) Max @ VGS = 4.5 V(mΩ):
7500
- RDS(on) Max @ VGS = 10 V(mΩ):
7500
- Qg Typ @ VGS = 10 V (nC):
1
- Ciss Typ (pF):
20
- Package Type:
SOT-23-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
恩XP |
15+ |
SOT23 |
30000 |
全新原裝 |
詢價 | ||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價 | ||||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價 | ||||
ON |
17+18+ |
SOT23 |
488459 |
原廠原裝,本地現(xiàn)貨庫存,假一罰十! |
詢價 | ||
長電 |
11+ |
SOT23 |
50000 |
深圳現(xiàn)貨 |
詢價 | ||
恩XP |
24+/25+ |
SOT236 |
99000 |
100%原裝正品真實庫存,支持實單 |
詢價 | ||
ON-SEMI |
22+ |
N/A |
9000 |
原裝正品 香港現(xiàn)貨 |
詢價 | ||
恩XP |
1118 |
SOT236 |
340 |
現(xiàn)貨庫存,有單來談 |
詢價 | ||
恩XP |
25+ |
7589 |
全新原裝現(xiàn)貨,支持排單訂貨,可含稅開票 |
詢價 | |||
恩XP |
16+ |
SOT23 |
12350 |
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 |
相關(guān)規(guī)格書
更多- AIP5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- 4TPE330MW
相關(guān)庫存
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- 4TPE330M

