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                >2N700>規(guī)格書列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          2N7002
          絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23；N-CHANNEL ENHANCEMENT-MODE MOSFET
          
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002 type is an  N-Channel enhancement-mode MOSFET manufactured  by the N-Channel DMOS Process, designed for high  speed pulsed amplifier and driver applications.
          文件：80.02 Kbytes 頁數(shù)：2 Pages
          CENTRAL
          

          2N7002
          N-Channel Enhancement Mode Field Effect Transistor
          
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
          文件：474.45 Kbytes 頁數(shù)：5 Pages
          CET
          華瑞
          

          2N7002
          絲?。?a target="_blank" title="Marking" href="/k72/marking.html">K72；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
          
Description
This MOSFET has been designed to  minimize the on-state resistance  (RDS(ON)) and yet maintain superior switching performance, making it  ideal for high efficiency po wer management applications.
Features
? Low On-Resistance     
? Low Gate Threshold Voltage
? Low Input Capacitanc
          文件：55.51 Kbytes 頁數(shù)：3 Pages
          DIODES
          美臺(tái)半導(dǎo)體
          

          2N7002
          N-Channel Enchanncement-Mode Mos Transistor
          
N-CHANNEL ENCHANNCEMENT-MODE MOS TRANSISTOR
Description
???????SOT-23
          文件：228.34 Kbytes 頁數(shù)：3 Pages
          FCI
          富加宜
          

          2N7002
          N-Channel MOSFET
          
Features
? Halogen free available upon request by adding suffix -HF ·
? Epoxy meets UL 94 V-0 flammability rating
? Moisture Sensitivity Level 1
? Advanced Trench Process Technology
? High Input Impedance
? High Speed Switching
? CMOS Logic Compatible Input
? Marking : 7002/S72
·  · 

          文件：174.87 Kbytes 頁數(shù)：5 Pages
          MCC
          

          2N7002
          N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
          
Features
? Low On-Resistance: RDS(ON)
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? Low Input/Output Leakage
Mechanical Data
? Case: SOT-23, Molded Plastic
? Terminals: Solderable per MIL-STD-202, Method 208
? Terminal Connections: See Diagram
? Marking: K
          文件：91.32 Kbytes 頁數(shù)：2 Pages
          YIXIN
          壹芯微
          

          2N7002
          N-Channel Enhancement MOSFET
          
Features
● High density cell design for low RDS(ON)
● Voltage controlled small signal switch
● Rugged and reliable
● High saturation current capability
          文件：433.46 Kbytes 頁數(shù)：3 Pages
          YFWDIODE
          佑風(fēng)微
          

          2N7002
          Plastic-Encapsulate Mosfets
          
N-Channel MOSFET
FEATURES
   High density cell design for low RDS(ON)
   Voltage controlled small signal switch.
   Rugged and reliable.
   High saturation current capability.
          文件：382.64 Kbytes 頁數(shù)：4 Pages
          HOTTECH
          合科泰
          

          2N7002
          SOT-23 Plastic-Encapsulate MOSFET
          
N -Channel MOSFET
Features
● MOSFET (N-Channel)
● High density cell design for low RDS(ON)
● Voltage controlled small signal switch
● Rugged and reliable
● High saturation current capability
Applications
● Load Switch for Portable Devices
● DC/DC Converter
          文件：2.50871 Mbytes 頁數(shù)：5 Pages
          HDSEMI
          海德半導(dǎo)體
          

          2N7002
          N-CHANNEL ENHANCEMENT-MODE MOSFETS
          
VOLTAGE 60Volts CURRENT 0.115 Ampers
FEATURES
   SOT-23 Field Effect Transistors
          文件：2.80796 Mbytes 頁數(shù)：4 Pages
          NIUHANG
          紐航電子
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Pb-free：
            Pb
          • Halide free：
            H
          • Status：
            Active
          • Channel Polarity：
            N-Channel
          • Configuration：
            Single
          • V(BR)DSS Min (V)：
            60
          • VGS Max (V)：
            ±20
          • VGS(th) Max (V)：
            2.5
          • ID Max (A)：
            0.115
          • PD Max (W)：
            0.2
          • RDS(on) Max @ VGS = 4.5 V(mΩ)：
            7500
          • RDS(on) Max @ VGS = 10 V(mΩ)：
            7500
          • Qg Typ @ VGS = 10 V (nC)：
            1
          • Ciss Typ (pF)：
            20
          • Package Type：
            SOT-23-3
          
            
          
        
          
            
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