| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：Z3；Package：SOT-416；60 V, 290 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFETtechnology ? E 文件：361.32 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/z3/marking.html">Z3；Package：SOT416；60 V, 290 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote 文件：460.37 Kbytes 頁數(shù)：17 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zg/marking.html">ZG；Package：SOT666；60 V, 340 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD 文件：281.69 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zg/marking.html">ZG；Package：SOT-666；60 V, 340 mA dual N-channel Trench MOSFET General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFETtechnology 文件：379.26 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
60V Dual N-Channel Enhancement Mode MOSFET Features ● Fast switching ● Green Device Available ● Suit for 1.5V Gate Drive Applications 文件：945.69 Kbytes 頁數(shù)：3 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
絲印：X9-；Package：SOT-323；60 V, 310 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFETtechnology ? E 文件：164.5 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/x9/marking.html">X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro 文件：724.88 Kbytes 頁數(shù)：16 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/x9/marking.html">X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD 文件：286.36 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
60 V, 310 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD 文件：286.36 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor Features ?High density cell design for low RDS(ON)?Voltage controlled small signal switching?High saturation current capability?High speed switching?-CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable 文件：458.28 Kbytes 頁數(shù)：3 Pages | GWSEMI 唯圣電子 | GWSEMI |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
60
- VGS Max (V)：
±20
- VGS(th) Max (V)：
2.5
- ID Max (A)：
0.115
- PD Max (W)：
0.2
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
7500
- RDS(on) Max @ VGS = 10 V(mΩ)：
7500
- Qg Typ @ VGS = 10 V (nC)：
1
- Ciss Typ (pF)：
20
- Package Type：
SOT-23-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
恩XP |
15+ |
SOT23 |
30000 |
全新原裝 |
詢價 | ||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價 | ||||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價 | ||||
ON |
17+18+ |
SOT23 |
488459 |
原廠原裝,本地現(xiàn)貨庫存,假一罰十! |
詢價 | ||
長電 |
11+ |
SOT23 |
50000 |
深圳現(xiàn)貨 |
詢價 | ||
恩XP |
24+/25+ |
SOT236 |
99000 |
100%原裝正品真實庫存,支持實單 |
詢價 | ||
ON-SEMI |
22+ |
N/A |
9000 |
原裝正品 香港現(xiàn)貨 |
詢價 | ||
恩XP |
1118 |
SOT236 |
340 |
現(xiàn)貨庫存,有單來談 |
詢價 | ||
恩XP |
25+ |
7589 |
全新原裝現(xiàn)貨,支持排單訂貨,可含稅開票 |
詢價 | |||
恩XP |
16+ |
SOT23 |
12350 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 |
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