Voltage controlled small signal switch

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：1.49074 Mbytes 頁數(shù)：2 Pages

DGNJDZ

南晶電子

N-Channel Enhancement Mode MOSFET

Feature ● 60V/0.5A, RDS(ON) = 7500mΩ(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7500mΩ(MAX) @VGS = 4.5V. Id = 0.2A ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOT-23 for Surface Mount Package. Applications ● Power Management in Desktop C

文件：153.75 Kbytes 頁數(shù)：3 Pages

ZPSEMIZP Semiconductor

至尚臻品

MOSFET (N-Channel)

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：486.19 Kbytes 頁數(shù)：2 Pages

WINNERJOIN

永而佳

絲?。?a target="_blank" title="Marking" href="/12/marking.html">12；Package：SOT23；60 V, 300 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Suitable for logic level gate drive sources ? Very fast switching ? Surface-mounted package ? Trench MOSFET technology 1.3 Appl

文件：855.83 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

Small Signal MOSFET

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ? Pb?Free Package is Available. : Halogen Free ? AEC-Q101 Pass

文件：913.48 Kbytes 頁數(shù)：4 Pages

YEASHIN

亞昕科技

絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE * High density cell design for low RDS(ON) * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability

文件：743.65 Kbytes 頁數(shù)：4 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT23；60V N-Channel Mosfet

Application ? Dict logi-fevl interface: TTLICMOS ? Drivers: relays, solenoids, lamps, hammers, display, memories, ransistors, tc. ? Battery operated systems ? Soicstate relays

文件：981.58 Kbytes 頁數(shù)：3 Pages

TECHPUBLIC

臺舟電子

N-Channel Enhancement Mode Field Effect Transistor

General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS

文件：1.42612 Mbytes 頁數(shù)：5 Pages

SAMYANG

三陽電子

N-Channel MOSFET

Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

文件：297.43 Kbytes 頁數(shù)：3 Pages

EVVOSEMI

翊歐

Plastic-Encapsulated Transistors

FEATURES Power dissipation PD : 0.35W (Tamb=25℃) Drain current ID: 250mA Drain-Source voltage VDS: 60V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：111.93 Kbytes 頁數(shù)：1 Pages

TEL