650 V half bridge gate driver with integrated bootstrap diode

Features ? Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology ? Negative VS transient immunity of -100 V ? Floating channel designed for bootstrap operation ? Operating voltages (VS node) upto + 650 V ? Maximum bootstrap voltage (VB node) of + 675 V ? Integrated ultra-fast, low

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INFINEON

英飛凌

650 V high-side and low-side gate driver with integrated bootstrap diode

文件：1.12574 Mbytes 頁(yè)數(shù)：24 Pages

INFINEON

英飛凌

帶有集成自舉二極管的 650 V 高側(cè)和低側(cè)柵極驅(qū)動(dòng)器

\n優(yōu)勢(shì):\n? Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design\n? 50% lower level-shift losses\n? Excellent ruggedness and noise immunity against negative transient voltages on VS pin;

Infineon

英飛凌

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類(lèi)別：集成電路（IC） 柵極驅(qū)動(dòng)器 描述：LEVEL SHIFT SOI

INFINEON

英飛凌