650 V half bridge gate driver with integrated bootstrap diode

Features ? Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology ? Negative VS transient immunity of -100 V ? Floating channel designed for bootstrap operation ? Operating voltages (VS node) upto + 650 V ? Maximum bootstrap voltage (VB node) of + 675 V ? Integrated ultra-fast, low

文件：776.08 Kbytes 頁數(shù)：26 Pages

INFINEON

英飛凌

650 V half bridge gate driver with integrated bootstrap diode

文件：1.14564 Mbytes 頁數(shù)：25 Pages

INFINEON

英飛凌

集成自舉二極管的 650 V 半橋柵極驅(qū)動器

\n優(yōu)勢:\n? Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design\n? 50% lower level-shift losses\n? Excellent ruggedness and noise immunity against negative transient voltages on VS pin;

Infineon

英飛凌

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 柵極驅(qū)動器 描述：LEVEL SHIFT SOI

INFINEON

英飛凌