650 V half bridge gate driver with integrated bootstrap diode

Description The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at nega

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INFINEON

英飛凌

650 V half bridge gate driver with integrated bootstrap diode

Description The 2ED21091S06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative vol

文件：1.54825 Mbytes 頁(yè)數(shù)：26 Pages

INFINEON

英飛凌

650 V half bridge gate driver with integrated bootstrap diode

Description The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at nega

文件：1.70988 Mbytes 頁(yè)數(shù)：25 Pages

INFINEON

英飛凌

650 V high-side and low-side gate driver with integrated bootstrap diode

Description The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negat

文件：1.61501 Mbytes 頁(yè)數(shù)：24 Pages

INFINEON

英飛凌

650 V、0.7 A 半橋柵極驅(qū)動(dòng)器，集成自舉二極管和關(guān)斷功能，采用 DSO-8 封裝

650 V 半橋高速功率 MOSFET 和 IGBT 柵極驅(qū)動(dòng)器，采用 DSO-8 封裝，具有典型的 0.29 拉電流和 0.7 灌電流?；谟w凌的 SOI 技術(shù)，具有出色的堅(jiān)固性和對(duì) VS 引腳上負(fù)瞬態(tài)電壓的抗噪能力。器件中不存在寄生晶閘管結(jié)構(gòu)，因此在所有溫度和電壓條件下都不會(huì)發(fā)生寄生閂鎖。 ? 操作。電壓（VS 節(jié)點(diǎn)）< + 650 V\n? 負(fù)。VS 瞬態(tài)抗擾度為 100 V\n? Integr.超快速自舉二極管\n? 自舉操作的浮動(dòng)通道\n? 兩個(gè)通道均具有獨(dú)立的 UVLO\n? DT/SD 輸入可關(guān)閉兩個(gè)通道\n? 內(nèi)部 540 ns 死區(qū)時(shí)間\n? 740 / 200 ns 傳播延遲\n? 最大電源電壓 25 V\n? VS 引腳上的邏輯操作電壓高達(dá) -11 V\n? 負(fù)。輸入電壓容差為 –5 V\n? 適用于高側(cè)開(kāi)關(guān);

Infineon

英飛凌

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類(lèi)別：集成電路（IC） 柵極驅(qū)動(dòng)器 描述：IC GATE DRIVER DSO-8

INFINEON

英飛凌