| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
10N60 | 絲?。?strong>10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET 文件：976.2 Kbytes 頁(yè)數(shù)：11 Pages | WXDH 東海半導(dǎo)體 | WXDH | |
10N60 | 絲印：10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET 文件：964.56 Kbytes 頁(yè)數(shù)：11 Pages | WXDH 東海半導(dǎo)體 | WXDH | |
10N60 | 絲?。?strong>10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET 文件：964.93 Kbytes 頁(yè)數(shù)：11 Pages | WXDH 東海半導(dǎo)體 | WXDH | |
10N60 | 絲?。?strong>10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET 文件：963.95 Kbytes 頁(yè)數(shù)：11 Pages | WXDH 東海半導(dǎo)體 | WXDH | |
絲印：10N600；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET General Description The RM10N600LD use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea 文件：1.86187 Mbytes 頁(yè)數(shù)：9 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/10n60m2/marking.html">10N60M2；Package：PowerFLAT；N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge 文件：1.02603 Mbytes 頁(yè)數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/10n60dm2/marking.html">10N60DM2；Package：DPAK；N-channel 600 V, 0.440 廓 typ., 8 A MDmesh??DM2 Power MOSFET in a DPAK package 文件：813.84 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：10N60AF；Package：TO-220F(0.5mm)；10A 600V N-channel enhanced field effect transistor 文件：962.23 Kbytes 頁(yè)數(shù)：6 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲印：10N60AS；Package：TO-263；10A 600V N-channel enhanced field effect transistor 文件：962.23 Kbytes 頁(yè)數(shù)：6 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲?。?a target="_blank" title="Marking" href="/10n60as/marking.html">10N60AS；Package：TO-263；10A 600V N-channel enhanced field effect transistor 文件：962.23 Kbytes 頁(yè)數(shù)：6 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE |
詳細(xì)參數(shù)
- 型號(hào)：
10N60
- 制造商：
UTC-IC
- 制造商全稱：
UTC-IC
- 功能描述：
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220 |
14500 |
原廠原裝正品 |
詢價(jià) | ||
FSC |
25+ |
TO220 |
6500 |
十七年專營(yíng)原裝現(xiàn)貨一手貨源,樣品免費(fèi)送 |
詢價(jià) | ||
ST |
2450+ |
TO-220 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
FSC |
23+ |
TO-220 |
30000 |
原裝正品,假一罰十 |
詢價(jià) | ||
25+ |
5000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||||
FSC |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢 |
詢價(jià) | ||
UBIQ |
25+ |
TO220 |
15000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
TF(拓鋒) |
2447 |
T0-220 |
105000 |
50個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) | ||
FSC |
23+ |
TO220 |
3000 |
原裝正品假一罰百!可開(kāi)增票! |
詢價(jià) | ||
AO/FCS/IPS |
23+ |
TO-220220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
相關(guān)芯片絲印
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相關(guān)庫(kù)存
更多- YFW10N60A9
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- 10N80
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- STD10P10F6
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- CT110PDC-ID6
- CT110PDV-ID6
- CT110RDC-ID6
- CT110RDV-ID6
- SFR10S40AD
- SFR10S40ASTR
- TB10S-10
- TB4S-10
- TB8S-10
- AP10TN028YT
- AP10TN135H
- AP10TN135JB
- AP10TN135M
- AP10TN5R5MT
- AP10TN6R0I
- AP10TN9R0P
