絲?。?strong>10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

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絲?。?strong>10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh? K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 techno

文件：841.46 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導體

絲?。?strong>10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh? K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 techno

文件：841.46 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

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絲?。?strong>10N80K5；Package：H2PAK-2；Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Features ? AEC-Q101 qualified ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technolo

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STMICROELECTRONICS

意法半導體