| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
10N60 | 絲?。?strong>10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET 文件：976.2 Kbytes 頁數(shù)：11 Pages | WXDH 東海半導(dǎo)體 | WXDH | |
10N60 | 絲?。?strong>10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET 文件：964.56 Kbytes 頁數(shù)：11 Pages | WXDH 東海半導(dǎo)體 | WXDH | |
10N60 | 絲印：10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET 文件：964.93 Kbytes 頁數(shù)：11 Pages | WXDH 東海半導(dǎo)體 | WXDH | |
10N60 | 絲?。?strong>10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET 文件：963.95 Kbytes 頁數(shù)：11 Pages | WXDH 東海半導(dǎo)體 | WXDH | |
絲?。?a target="_blank" title="Marking" href="/10n600/marking.html">10N600；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET General Description The RM10N600LD use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea 文件：1.86187 Mbytes 頁數(shù)：9 Pages | RECTRON 麗正國際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/10n60m2/marking.html">10N60M2；Package：PowerFLAT；N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge 文件：1.02603 Mbytes 頁數(shù)：16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/10n60dm2/marking.html">10N60DM2；Package：DPAK；N-channel 600 V, 0.440 廓 typ., 8 A MDmesh??DM2 Power MOSFET in a DPAK package 文件：813.84 Kbytes 頁數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/10n60af/marking.html">10N60AF；Package：TO-220F(0.5mm)；10A 600V N-channel enhanced field effect transistor 文件：962.23 Kbytes 頁數(shù)：6 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲印：10N60AS；Package：TO-263；10A 600V N-channel enhanced field effect transistor 文件：962.23 Kbytes 頁數(shù)：6 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲?。?a target="_blank" title="Marking" href="/10n60as/marking.html">10N60AS；Package：TO-263；10A 600V N-channel enhanced field effect transistor 文件：962.23 Kbytes 頁數(shù)：6 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE |
詳細(xì)參數(shù)
- 型號：
10N60
- 制造商：
UTC-IC
- 制造商全稱：
UTC-IC
- 功能描述：
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220 |
14500 |
原廠原裝正品 |
詢價 | ||
FSC |
25+ |
TO220 |
6500 |
十七年專營原裝現(xiàn)貨一手貨源,樣品免費送 |
詢價 | ||
ST |
2450+ |
TO-220 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
FSC |
23+ |
TO-220 |
30000 |
原裝正品,假一罰十 |
詢價 | ||
25+ |
5000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||||
FSC |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
UBIQ |
25+ |
TO220 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
TF(拓鋒) |
2447 |
T0-220 |
105000 |
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
FSC |
23+ |
TO220 |
3000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
AO/FCS/IPS |
23+ |
TO-220220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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