絲?。?strong>10N80；Package：TO-220F；800V N-Channel Planar MOSFET

Features RDSON=1.0Ω @Vgs=10V, Id=5A Low gate Charge(typical 45nC) Low Crss (typical 6.3pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

文件：1.11327 Mbytes 頁數(shù)：7 Pages

SY

順燁電子

絲印：10N80；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：578.57 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲?。?strong>10N80；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：578.57 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲?。?strong>10N80；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：578.57 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲?。?strong>10N80；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：578.57 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/10n80k5/marking.html">10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：576.74 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh? K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 techno

文件：841.46 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh? K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features ? Industry’s lowest RDS(on) x area ? Industry’s best figure of merit (FoM) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 techno

文件：841.46 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/10n80k5/marking.html">10N80K5；Package：H2PAK-2；Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Features ? AEC-Q101 qualified ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technolo

文件：424.56 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/10n80ap/marking.html">10N80AP；Package：TO-247；10A 800V N-channel enhanced field effect transistor

文件：935.43 Kbytes 頁數(shù)：6 Pages

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