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                >VB20120C>規(guī)格書列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          VB20120C
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
? Component in acco
          文件：167.06 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120C-E3
          Dual High Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
? Component in acco
          文件：161.84 Kbytes 頁數(shù)：6 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120C-E3
          Schotty Barrier Diode
          
FEATURES
· Low Forward Voltage Drop, Low Power losses
· High Efficiency Operation
· SMD
APPLICATIONS
· Switching Power Supply (SPS)
· High Frequency Converter
· DC/DC Converter
          文件：315.36 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          VB20120C-E3/4W
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
? Component in acco
          文件：167.06 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120C-E3/8W
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
? Component in acco
          文件：167.06 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120C-E3SLASH4W
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
? Component in acco
          文件：167.06 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120C-E3SLASH8W
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
? Component in acco
          文件：167.06 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120C-M3
          Schotty Barrier Diode
          
FEATURES
· Low Forward Voltage Drop, Low Power losses
· High Efficiency Operation
· SMD
APPLICATIONS
· Switching Power Supply (SPS)
· High Frequency Converter
· DC/DC Converter
          文件：315.36 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          VB20120C-M3
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIO
          文件：103.12 Kbytes 頁數(shù)：4 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VB20120C-M3_V01
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIO
          文件：103.12 Kbytes 頁數(shù)：4 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號(hào)：
            VB20120C
          • 制造商：
            VISHAY 
          • 制造商全稱：
            Vishay Siliconix 
          • 功能描述：
            Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A 
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          
                
          



          TOSHIBA/東芝
          		

          23+
          		

          DIP-8
          		

          69820
          		

          終端可以免費(fèi)供樣,支持BOM配單!
          		
詢價(jià)
          

          



          VISHAY/威世
          		

          22+
          		

          TO-263
          		

          6000
          		

          十年配單,只做原裝
          		
詢價(jià)
          

          



          VISHAY
          		

          25+
          		

          TO-263
          		

          12300
          		

          獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
          		
詢價(jià)
          

          



          VISHAY
          		

          		

          原廠封裝
          		

          9800
          		

          原裝進(jìn)口公司現(xiàn)貨假一賠百
          		
詢價(jià)
          

          



          VISHAY/威世
          		

          2447
          		

          TO-263
          		

          100500
          		

          一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          		
詢價(jià)
          

          



          VISHAY
          		

          25+
          		

          TO-263
          		

          3675
          		

          就找我吧!--邀您體驗(yàn)愉快問購元件!
          		
詢價(jià)
          

          



          VISHAY/威世
          		

          23+
          		

          TO263AB
          		

          11200
          		

          原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          		
詢價(jià)
          

          



          VISHAY/威世
          		

          22+
          		

          TO-263
          		

          100000
          		

          代理渠道/只做原裝/可含稅
          		
詢價(jià)
          

          



          VIS
          		

          23+
          		

          TO-263
          		

          8560
          		

          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
          		
詢價(jià)
          

          



          Vishay Semiconductor Diodes Di
          		

          23+
          		

          TO263AB
          		

          8000
          		

          只做原裝現(xiàn)貨
          		
詢價(jià)
          

            
          
        
          
        
          更多VB20120C供應(yīng)商
            更新時(shí)間2026-1-19 9:40:00
        
          
        
          
          
          
            
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