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    首頁 >V10>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    V10D202C

    Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology generation 2 ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified a

    文件:126.55 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10D202C_V01

    Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology generation 2 ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified a

    文件:126.55 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10D45C

    Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A

    文件:125.52 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10D45C_V01

    Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A

    文件:125.52 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10D60C

    Dual TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A

    文件:125.5 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10D60C_V01

    Dual TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A

    文件:125.5 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10DM100C

    Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available:? -

    文件:111.2 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10DM100C_V01

    Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available:? -

    文件:111.2 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10DM150C

    Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available:? -

    文件:111.24 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10DM150C_V01

    Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available:? -

    文件:111.24 Kbytes 頁數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    詳細參數(shù)

    • 型號:

      V10

    • 制造商:

      VISHAY

    • 制造商全稱:

      Vishay Siliconix

    • 功能描述:

      DZ23-V

    供應(yīng)商型號品牌批號封裝庫存備注價格
    VISHAY
    23+
    NA
    8486
    專做原裝正品,假一罰百!
    詢價
    VISHAY/威世
    23+
    SOT23
    83500
    原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
    詢價
    VISHAY
    23+
    SOT-23
    34142
    ##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
    詢價
    VISHAY/威世
    2026+
    SOT-23
    120
    原裝正品,假一罰十!
    詢價
    VISHAY/威世
    25+
    SOT-23
    120
    原裝正品,假一罰十!
    詢價
    VISHAY
    24+
    SOT-23
    80000
    只做自己庫存 全新原裝進口正品假一賠百 可開13%增
    詢價
    PANJIT/強茂
    23+
    SOT-23
    50000
    全新原裝正品現(xiàn)貨,支持訂貨
    詢價
    PANJIT/強茂
    24+
    SOT-23
    60000
    全新原裝現(xiàn)貨
    詢價
    xx
    2023+環(huán)保現(xiàn)貨
    SOT-23
    30000
    專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
    詢價
    YANGJIE
    24+
    SOT-23
    50000
    原廠直銷全新原裝正品現(xiàn)貨 歡迎選購
    詢價
    更多V10供應(yīng)商 更新時間2026-1-22 17:00:00

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