| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 ? Material categorization: for definitions 文件：136.37 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 ? Material categorization: for definitions 文件：136.37 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available? - Automotive ordering code: base P/NHM3 ? Material categorization: for definition 文件：136.9 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available? - Automotive ordering code: base P/NHM3 ? Material categorization: for definition 文件：136.9 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A 文件：111.91 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A 文件：111.91 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號(hào)：
V10
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
DZ23-V
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
NA |
8486 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
VISHAY/威世 |
23+ |
SOT23 |
83500 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
VISHAY |
23+ |
SOT-23 |
34142 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
VISHAY/威世 |
25+ |
SOT-23 |
120 |
原裝正品,假一罰十! |
詢價(jià) | ||
VISHAY/威世 |
25+ |
SOT-23 |
120 |
原裝正品,假一罰十! |
詢價(jià) | ||
VISHAY |
24+ |
SOT-23 |
80000 |
只做自己庫存 全新原裝進(jìn)口正品假一賠百 可開13%增 |
詢價(jià) | ||
PANJIT/強(qiáng)茂 |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
PANJIT/強(qiáng)茂 |
24+ |
SOT-23 |
60000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
xx |
2023+環(huán)保現(xiàn)貨 |
SOT-23 |
30000 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價(jià) | ||
YANGJIE |
24+ |
SOT-23 |
50000 |
原廠直銷全新原裝正品現(xiàn)貨 歡迎選購 |
詢價(jià) |
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